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Brand Name : onsemi
Model Number : FQP55N10
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
Rds On (Max) @ Id, Vgs : 26mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 98 nC @ 10 V
Vgs (Max) : ±25V
FQP55N10 MOSFET Power Electronics High-Performance High-Efficiency Switching for Heavy-Duty Applications
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 44A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 135W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-252AA | |
| Package / Case |
FQP55N10 MOSFET Power Electronics
Manufacturer: ON Semiconductor
Features:
• Ultra-low ON-resistance
• Low gate charge
• Halogen-free available
• 100% avalanche tested
• Fast switching
• Low input capacitance
• RoHS compliant
Applications:
• DC-DC Conversion
• General Power Switching
• Uninterruptible Power Supplies
• Motor Control
• Lighting
Specifications:
• Drain-Source Voltage: 55V
• Continuous Drain Current: 10A
• Drain-Source ON Resistance: 0.073Ω
• Gate-Source Voltage: ±20V
• Operating Temperature Range: -55°C to 150°C
• Storage Temperature Range: -55°C to 150°C

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FQP55N10 MOSFET Power Electronics High-Performance High-Efficiency Switching for Heavy-Duty Applications Images |